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2008
Conference Paper
Titel
Spatial variations of carrier and defect concentration in VGF GaAs:Si
Abstract
Wafers cut from Si-doped vertical gradient freeze (VGF) GaAs crystals with silicon concentration varying from 1.5 to 3.4 x 10(18) cm(-3) have been investigated by low temperature photoluminescence topography. Carrier concentration maps were calculated from intensity topograms recorded on the high-energy slope of the band-to-band recombination, which depends on the carrier concentration predominantly due to band renormalization and band filling. Comparison to maps recorded on the B-As-related PL band reveal a clear anti-correlation consistent with the view of B-As complex formation.
Author(s)