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Terahertz detection by the entire channel of high electron mobility transistors

Terahertz Detektion im gesamten Kanal eines HEMT
 
: Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Knap, W.; Grynberg, M.; Köhler, K.; Valusis, G.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.; Caban, P.; Strupinski, W.

Acta physica Polonica. A, General physics, physics of condensed matter, optics and quantum electronics, atomic and molecular physics, applied physics 114 (2008), No.5, pp.1343-1348
ISSN: 0587-4246
ISSN: 0587-4284
Polish Seminar on Positron Annihilation (PSPA) <37, 2007, Ladek-Zdroj>
English
Journal Article, Conference Paper
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; heterostructure; Heterostruktur; electrical property; elektrische Eigenschaft

Abstract
GaAs/ALGaAs and GaN/AlGaN high electron mobility transistors were used as detectors of THz electromagnetic radiation at liquid helium temperatures. Application of high magnetic fields led to the Shubnikov-de Haas oscillations of the detection signal. Measurements carried out with a simultaneous modulation of the intensity of the incident THz beam and the transistor gate voltage showed that the detection signal is determined by the electron plasma both in the gated and ungated parts of the transistor channel. This result is of importance for understanding the physical mechanism of the detection in high electron mobility transistors and for development of a proper theoretical description of this process.

: http://publica.fraunhofer.de/documents/N-85495.html