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Broadband antireflective structures for the THz spectral range fabricated on high resistive float zone silicon

 
: Brückner, C.; Käsebier, T.; Pradarutti, B.; Riehemann, S.; Notni, G.; Kley, E.B.; Tünnermann, A.

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Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
33rd International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2008. Vol.1 : 16th International Conference on Terahertz Electronics; 15.-19.9.2008 Pasadena, California, USA
New York, NY: IEEE, 2008
ISBN: 978-1-4244-2120-6
ISBN: 978-1-4244-2119-0
pp.294-295
International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) <33, 2008, Pasadena/Calif.>
International Conference on Terahertz Electronics <16, 2008, Pasadena/Calif.>
English
Conference Paper
Fraunhofer IOF ()

Abstract
Antireflective structures for a spectral range from 0.1-1.2 THz are applied to the surface of high resistive float zone silicon by deep reactive ion etching. Binary hexagonal and rectangular structures yield an increase in the pulse maximum of the electric field strength of about 20 percent for one structured surface,

: http://publica.fraunhofer.de/documents/N-84571.html