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High sensitive UV-enhanced linear CMOS photosensor

: Durini, D.; Özkan, E.; Brockherde, W.; Hosticka, B.J.

Institute of Electrical and Electronics Engineers -IEEE-:
ESSDERC and ESSCIRC 2008. CD-ROM : Inklusive Fringe Poster Session, 15 - 19 September 2008, Edinburgh
Bristol: IOP Publishing, 2008
European Solid State Circuits Conference (ESSCIRC) <34, 2008, Edinburgh>
European Solid State Device Research Conference (ESSDERC) <38, 2008, Edinburgh>
Conference Paper
Fraunhofer IMS ()

This contribution describes a highly sensitive UVenhanced linear CMOS photosensor which exhibits very low noise. The sensor features on-chip readout and control electronics, global synchronous shutter, programmable spectral responsivity, clock-independent variable integration time, two different acquisition modes, selectable region-of-interest readout, and a binning capability. The device has been designed and fabricated in the 0.5?m standard CMOS process available at the Fraunhofer IMS.