Integration of top-emitting organic light emitting diodes on CMOS substrates

The integration of top-emitting OLEDs on CMOS substrates is of interest for a variety of applications. Whereas OLEDbased microdisplays have already been commercialized, OLEDs could also be used to realize sensor applications, optocouplers, etc. Red top-emitting OLED structures were deposited on CMOS substrates. The OLED technology includes phosphorescent emitters and doped transport layers. This approach results in high efficiencies and low operating voltage. The CMOS top metal is crucial for this type of devices since this layer is the interface between CMOS and OLED technology. In a first step, OLED process development was carried out on passive substrates without transistor circuit but CMOS compatible interface. Luminance values of 100cd/m2 and 1000cd/m2 are reached at 2.45V and 3.1V, respectively. Current efficiency at these luminance values is 14.2 cd/A and 13.4 cd/A, respectively, with a peak wavelength of 627nm. This OLED stack was then successfully prepared on full-CMOS-substrates. luminance values is 14.2 cd/A and 13.4 cd/A, respectively, with a peak wavelength of 627nm. This OLED stack was then successfully prepared on full-CMOS-substrates.