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Calibrated numerical model of a GaInP-GaAs dual-junction solar cell

: Philipps, S.P.; Hermle, M.; Letay, G.; Dimroth, F.; George, B.M.; Bett, A.W.


Physica status solidi. Rapid research letters 2 (2008), No.4, pp.166-168
ISSN: 1862-6254
ISSN: 1862-6270
Journal Article
Fraunhofer ISE ()

In this letter a calibrated numerical model of a III-V dualjunction solar cell including tunnel diode and Bragg reflector is presented. The quantum efficiencies of the subcells are computed by using the principle of current-limitation in monolithic multi-junction solar cells. A special procedure with bias-illumination and bias-voltage was implemented. Numerical simulations are used to study the influence of the top cell thickness on the cells' quantum efficiency and on the current-matching condition.