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Surface passivation schemes for high-efficiency n-type Si solar cells

: Benick, J.; Schultz-Wittmann, O.; Schon, J.; Glunz, S.W.


Physica status solidi. Rapid research letters 2 (2008), No.4, pp.145-147
ISSN: 1862-6254
ISSN: 1862-6270
Journal Article
Fraunhofer ISE ()

An effective passivation on the front side boron emitter is essential to utilize the full potential of solar cells fabricated on n-type silicon. However, recent investigations have shown that it is more difficult to achieve a low surface recombination velocity on highly doped p-type silicon than on n-type silicon. Thus, the approach presented in this paper is to over-compensate the surface of the deep boron emitter locally by a shallow phosphorus diffusion. This inversion from p-type to n-tpe surface allows the use of standard technologies which are used for passivation of highly' doped n-type surfaces. Emitter saturation current densities (J(0c)) of 49 fA/cm(2) have been reached with this approach on SiO2 passivated lifetime samples. On solar cells a certified conversion efficiency of 21.7% with an open-circuit voltage (V-oc) of 676 mV was achieved.