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High-power high-brightness operation of a 2.25-mu m (AlGaIn)(AsSb)-based barrier-pumped vertical-external-cavity surface-emitting laser

Barrierengepumpter Halbleiter-Scheibenlaser auf der Basis von GaSb im Betrieb mit hoher Leistung und hoher Brillanz bei einer Emissionswellenlänge von 2.25µm
 
: Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.

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IEEE Photonics Technology Letters 20 (2008), No.7, pp.502-504
ISSN: 1041-1135
English
Journal Article
Fraunhofer IAF ()
infrared laser; Infrarot-Laser; semiconductor laser; Halbleiterlaser; semiconductor disc laser; Halbleiter-Scheibenlaser; surface emitting laser; oberflächenemittierender Laser; VECSEL; GaSb; (AlGaIn)(AsSb)

Abstract
We report on the output power performance and beam profile analysis of an optically pumped GaSb-based vertical-external-cavity surface-emitting laser operating at 2.25 mu m. The use of a SiC heatspreader and a precise control of the temperature-dependent modal gain allowed for improved high-power operation with a maximum continuous-wave output power of 3.4 W at -10 degrees C heatsink temperature. At 0 degrees C, a maximum output power >2.9 W was observed and still more than 1.6 W were obtained at room temperature. Using second-order moments for the definition of the beam diameter, a beam propagation factor of M-2 similar to 5 was measured at maximum output power. Optimizing the beam quality of the laser resulted in a beam profile close to the Gaussian TEM00 mode (M-2 approximate to 1.5) and still more than 2-W output power at 0 degrees C.

: http://publica.fraunhofer.de/documents/N-82074.html