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Alpha particle induced luminescence from multiple quantum wells

Alphateilchen induzierte Lumineszenz von Multi-Quantenfilmen
: Kundrotas, J.; Dargys, A.; Granja, C.; Köhler, K.; Pospísil, S.; Remeikis, V.; Smith, K.M.

Asmontas, S. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Smart Optical Inorganic Structures and Devices : Second International Conference on Advanced Optical Materials and Devices, 16 - 19 August 2000, Vilnius, Lithuania
Bellingham/Wash.: SPIE, 2001 (SPIE Proceedings Series 4318)
ISBN: 0-8194-4000-0
International Conference on Advanced Optical Materials and Devices (ADOM) <2, 2000, Vilnius>
Conference Paper
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; quantum wells; Quantenfilm; heterostructure; Heterostruktur

The luminescence induced by alpha particles in GaAs/Al(0.35)Ga(0.65)As multiple quantum well (MQW) semiconductor was detected and investigated. The luminescence was observed at liquid nitrogen and at room temperatures as light flashes induced by individual alpha-particles. The MQW samples studied, in addition, were investigated using standard photoluminescence method to show that alpha-particle created flashes are associated with the radiative decay of 2D excitons in quantum wells. Since the number of detected light quanta in a flash is critical, a discussion of the collection efficiency of photons created by a single alpha-particle is presented.