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A review of modeling issues for RF heterostructure device simulation

Eine Übersicht über Modellierungsfragen bei der RF-Heterostruktur-Bauelementsimulation
: Quay, R.; Schultheis, R.; Kellner, W.; Palankovski, V.; Selberherr, S.

Tsamis, C.:
Simulation of Semiconductor Processes and Devices. SISPAD 2001 : Proceedings of the International Conference
Wien: Springer, 2001
ISBN: 3-211-83708-6
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <6, 2001, Athen>
Conference Paper
Fraunhofer IAF ()
HBT; heterojunction bipolar transistor; HEMT; high electron mobility transistror; semiconductor device modeling; Halbleiterbauelementmodellierung; semiconductor heterojunction; Halbleiter-Heteroübergang; simulation software; Simulationssoftware

We give a summary of the state-of-the-art of heterostructure RF-device simulators for industrial application based on III-V compound semiconductors and compare critical modeling issues. Results from two-dimensional hydrodynamic simulations of High Electron Mobility Transistors (HEMTs) and Heterojunction Bipolar Transistors (HBTs) with MINIMOS-NT are presented. Simulation examples are chosen to demonstrate technologically important issues which can be addressed and solved by III-V device simulation. A summary of remaining modeling issues is provided.