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Optimization of High-Speed SiGe HBTs

Optimierung von Hochgeschwindigkeits-Silicium-Germanium-HBTs
 
: Palankovski, V.; Röhrer, G.; Wachmann, E.; Kraft, J.; Löffler, B.; Cervenka, J.; Quay, R.; Grasser, T.; Selberherr, S.

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IEEE Electron Devices Society:
High Performance Electron Devices for Microwave and Optoelectronic Applications
New York, NY: IEEE, 2001
ISBN: 0-7803-7049-X
pp.187-191
International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO) <9, 2001, Wien>
English
Conference Paper
Fraunhofer IAF ()
HBT; heterojunction bipolar transistor; simulation software; Simulationssoftware; semiconductor device modeling; Halbleiterbauelementmodellierung

Abstract
We present a methodology for characterization and optimization of SiGe HBTs from our 0.8 µm BiC-MOS technology. It involves process calibration, device calibration employing two-dimensional device simulation, and automated Technology Computer Aided Design (TCAD) optimization. The simulation results show a very good agreement with experimental data. In particular, we perform an optimization of collector doping for specific requirements (high speed or high breakdown voltage).

: http://publica.fraunhofer.de/documents/N-8139.html