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  4. High-brightness laser diodes using angular filtering by total reflection
 
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2001
Conference Paper
Title

High-brightness laser diodes using angular filtering by total reflection

Other Title
Laserdioden mit hoher Brillanz durch Winkelselektion mit Hilfe von Totalreflektion
Abstract
A high power semiconductor laser with a novel lateral design using angular filtering by total reflection for increased brightness is demonstrated. In this so called "Z-Laser" two inner surfaces guide the laser beam by total reflection in a Z shaped path through the laser. Higher order laser modes with larger divergence angles are suppressed because of a smaller reflectivity. This results in a reduced far-field angle. Simulations based on a two-dimensional steady state wave equation solved by using the Pade approximation, an one-dimensional carrier diffusion equation and a logarithmic gain model have been performed to design the device. First prototypes of the laser were fabricated on MBE grown InGaAs/AlGaAs wafers. The inner surfaces providing the refractive index step necessary for total reflection were prepared by chemically assisted ion-beam etching. Single lasers were mounted junction side down on copper heat-sinks. They show lateral far field angles smaller than 2 deg FWHM in excellent agreement with numerical simulations. Output powers of more than 500 mW cw out of a 36 µm facet have been reached. In conclusion, the "Z-Laser" is a promising new design for high power, high brightness semiconductor laser diodes.
Author(s)
Rogg, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Boucke, K.
Kelemen, M.T.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Rinner, F.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Pletschen, Wilfried  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kiefer, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Walther, Martin  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mikulla, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Poprawe, R.
Weimann, G.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
In-plane semiconductor lasers V  
Conference
Conferene on In-Plane Semiconductor Lasers 2001  
DOI
10.1117/12.429801
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • high brightness

  • hohe Brillanz

  • high-power diode laser

  • Hochleistungs-Diodenlaser

  • Z-Laser

  • InGaAs/AlGaAs

  • semiconductor laser diode

  • Halbleiterlaserdiode

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