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High performance metamorphic HEMT with 0.25 µm refractory metal gate on 4´´ GaAs substrate

Hohe Performance von metamorphen HEMTs mit 0.25 µm Refractory-Metall-Gates auf 4´´ GaAs Substrat
: Benkhelifa, F.; Chertouk, M.; Dammann, M.; Massler, H.; Walther, M.; Weimann, G.

GaAs MANTECH Conference 2001. Digest of papers : International Conference on Compound Semiconductor MANufacturing TECHnology
St. Louis: GaAS MANTECH Inc., 2001
ISBN: 1-893580-02-4
International Conference on on Compound Semiconductor MANufacturing TECHnology (GaAs MANTECH) <16, 2001, Las Vegas/Nev.>
Conference Paper
Fraunhofer IAF ()
metamorphic; metamorph; HEMT; refractory metal; spacer process; Spacerprozess

High performance metamorphic high electron mobility transistors (MHEMTs) on 4-inch GaAs substrate with a refractory metal gate are reported. A MHEMT with 0.25 µm gate length yields an extrapolated Ft of 115 GHz at drain bias of 1 V and a Fmax of 300 GHz at drain bias 2 V with an average gain of 13.7 dB at 60 GHz. Furthermore the MHEMT with a refracory metal gate demonstrates good thermal stability and promising accelerated DC life tests.