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On a computationally efficient approach to boron-interstitial clustering

Über einen recheneffizienten Ansatz zur Beschreibung von Bor-Eigenzwischengitteratomcluster
 
: Schermer, J.; Martinez-Limia, A.; Pichler, P.; Zechner, C.; Lerch, W.; Paul, S.

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Solid-State Electronics 52 (2008), No.9, pp.1424-1429
ISSN: 0038-1101
European Solid State Device Research Conference (ESSDERC) <37, 2007, München>
English
Journal Article, Conference Paper
Fraunhofer IISB ()
boron; silicon; clustering; activation; diffusion; boron-interstitial cluster; BIC

Abstract
The physical concepts developed to describe the transient activation of boron during post-implantation annealing are based on the concurrent formation of complexes comprising boron atoms and self-interstitials. A complete implementation in to TCAD software leads to a high number of equations to be solved which is often inadmissible for multi-dimensional simulations. In this work, a minimum number of such complexes is taken into considerations. We show that such a model is nevertheless able to reproduce profile shape and dopant activation for a large variety of implant and annealing conditions.

: http://publica.fraunhofer.de/documents/N-79771.html