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N-induced vibrational modes in GaAsN and GaInAsN studied by resonant Raman scattering

N-indizierte Schwingungsmoden in GaAsN und GaInAsN mittels resonanter Ramanstreuung
: Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Herres, N.


Journal of applied physics 90 (2001), No.10, pp.5027-5031
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer IAF ()
GaAsN; GaInAsN; phonon mode; Phononen; raman spectroscopy; Ramanspektroskopie

Vibrational modes introduced by the incorporation of N into GaAs and GaInAs have been studied by Raman spectroscopy on samples grown by molecular-beam epitaxy using a rf nitrogen plasma source. When proceeding from GaAs(1-x)N(x) to Ga(1-y)In(y)As(1-x)N(x) with x<=0.04 and y<=0.12, the nitrogen-induced vibrational mode near 470 cm(exp -1) observed in GaAsN was found to broaden and to split into up to three components with one component at a frequency higher than that of the Ga-N mode in GaAsN. This observation shows that the incorporation of In into GaAsN strongly affects the local bonding of the N atoms by changing the local strain distributions as well as the formation of a significant fraction of In-N bonds. The resonant enhancement in the scattering cross section of the Ga-N vibrational mode, observed in low N-content GaAs(1-x)N(x) (x about 0.01) for incident photon energies matching the mostly N-related E(+) transition at around 1.8 eV, was found to broaden significantly upon increasing N content as well as upon the addition of In to form GaInAs.