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Vertically coupled GalnAsP/lnP microring lasers fabricated by using full wafer bonding

: Heidrich, H.; Hamacher, M.; Troppenz, U.; Syvridis, D.; Alexandropoulos, D.; Mikroulis, S.; Tee, C.W.; Williams, K.; Dragoi, V.; Alexe, M.; Cristea, D.; Kusko, C.; Kusko, M.

Verband der Elektrotechnik, Elektronik, Informationstechnik -VDE-; IEEE Lasers and Electro-Optics Society; Informationstechnische Gesellschaft -ITG-; Institution of Engineering and Technology -IET-:
ECOC 2007, 33rd European Conference and Exhibition on Optical Communication. CD-ROM : September 16 - 20, 2007, Berlin, Germany
Berlin: VDE Verlag, 2007
ISBN: 3-8007-3042-1
ISBN: 978-3-8007-3042-1
2 pp.
European Conference on Optical Communication (ECOC) <33, 2007, Berlin>
Conference Paper
Fraunhofer HHI ()
gallium arsenide; indium compounds; optical waveguide; ring laser; wafer bonding; waveguide coupler

We summarize results on the processing and characterization of current injected 1.55 µm single- and multi-microring lasers including vertical active/passive waveguide coupling. The devices were fabricated by GalnAsP/lnP-GaAs full-wafer bonding using a BCB interface.