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Resonant tunneling as a dominant transport mechanism in n-GaAs/p-GaAs tunnel diodes

: Jandieri, K.; Baranovskii, S.D.; Rubel, O.; Stolz, W.; Gebhard, F.; Guter, W.; Hermle, M.; Bett, A.W.


Applied Physics Letters 92 (2008), No.24, Art. 243504, 3 pp.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer ISE ()

Current-voltage characteristics of Ga0.99In0.01As tunnel diodes are studied experimentally and theoretically. Three possible tunneling mechanisms are considered: direct band-to-band tunneling, phonon-assisted tunneling through defects, and resonant tunneling through defects. Comparison between theoretical results and experimental data reveals resonant tunneling through oxygen-related defects as the dominant transport mechanism at voltages corresponding to the peak current in diodes with doping level about 10(19) cm(-3).