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Influence of photon reabsorption on temperature dependent quasi-steady-state photoluminescence lifetime measurements on crystalline silicon

 
: Rüdiger, M.; Trupke, T.; Würfel, P.; Roth, T.; Glunz, S.W.

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Applied Physics Letters 92 (2008), No.22, Art. 222112, 3 pp.
ISSN: 0003-6951
ISSN: 1077-3118
English
Journal Article
Fraunhofer ISE ()

Abstract
Due to their robustness against various experimental artifacts and the high sensitivity at low minority carrier concentrations, quasi-steady-state photoluminescence lifetime measurements are well suited to provide the experimental data required for advanced defect spectroscopy methods. However, for a correct evaluation, photon reabsorption has to be considered. In this work it is evaluated quantitatively, to what extent and in which temperature range photon reabsorption in silicon wafers is significant. A method to correct the effect of photon reabsorption within silicon wafers on temperature dependent quasi-steady-state photoluminescence lifetime measurements is presented.

: http://publica.fraunhofer.de/documents/N-76499.html