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Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics

TUNA als hochauflösende Methode zur Charakterisierung der Filmmorphologie in dünnen Schichten hoher Dielektrizitätskonstante
: Yanev, V.; Rommel, M.; Lemberger, M.; Petersen, S.; Amon, B.; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Paskalev, A.; Weinreich, W.; Fachmann, C.; Heitmann, J.; Schroeder, U.

Fulltext urn:nbn:de:0011-n-761024 (234 KByte PDF)
MD5 Fingerprint: 3645552b51f3a55e146e1e8146f52520
Created on: 30.4.2009

Applied Physics Letters 92 (2008), No.25, Art. 252910, 3 pp.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article, Electronic Publication
Fraunhofer IISB ()
Fraunhofer CNT ()
tunneling; atomic-force; microscopy; characterization; film morphology; thin high-k dielectric

High-k dielectric layers (HfSixOy and ZrO2) with different film morphologies were investigated by tunneling atomic-force microscopy (TUNA). Different current distributions were observed for amorphous and nanocrystalline films by analyzing TUNA current maps. This even holds for crystalline layers where highly resolved atomic-force microscopy cannot detect any crystalline structures. However, TUNA enables the determination of morphology in terms of differences in current densities between nanocrystalline grains and their boundaries. The film morphologies were proven by high-resolution transmission electron microscopy. The investigations show TUNA as powerful current mapping tool for the characterization of morphology in thin high-k films on a nanoscale.