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  4. Temperature dependence of threshold current for 1.8 to 2.3 µm (AlGaIn)(AsSb)-based QW diode lasers
 
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2001
Conference Paper
Title

Temperature dependence of threshold current for 1.8 to 2.3 µm (AlGaIn)(AsSb)-based QW diode lasers

Other Title
Temperaturabhängigkeit des Schwellenstromes von (AlGaIn)(AsSb) basierenden Quantentopf Diodenlasern im Wellenbereich von 1.8 bis 2.3µm
Abstract
We report on the temperature dependence of threshold current for ridge waveguide. Ga(1-x)In(x)As(y)Sb(l-y)/Al(0.29)Ga(0.71)As(0.02)Sb(0.98) triple-QW diode lasers grown by MBE on GaSb. In and As contents in the QW were in the 0.16<=x<=0.30 and 0<=y<=0.15 range, respectively, resulting in different strain states, band gap energies and band offsets. Devices with lasing wavelengths extending from 1.8 to 2.3 µm at room-temperature were tested in cw mode. Characteristic temperatures for the threshold current ranged from T(0)=172 K at 1.94 µm to T(0)=93 K at 2.23 µm and T(0)=52 K at 2.34 µm for the 200 to 280 K temperature interval. The pronounced drop in T(0) is associated with a significant decrease in the valence band offset from 0.27 eV to 0.22 eV and 0.14 eV.
Author(s)
Rattunde, Marcel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mermelstein, C.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Simanowski, S.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schmitz, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kiefer, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Herres, N.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Fuchs, F.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Walther, Martin  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wagner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Compound Semiconductors 2000. Proceedings of the 27th International Symposium on Compound Semiconductors  
Conference
International Symposium on Compound Semiconductors (ISCS) 2000  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • diode laser

  • Diodenlaser

  • infrared laser

  • Infrarot-Laser

  • GaInAsSb

  • AlGaAsSb

  • GaSb

  • threshold current

  • Schwellstrom

  • temperature dependence

  • Temperaturabhängigkeit

  • band offset

  • Banddiskontinuität

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