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2001
Conference Paper
Titel
Temperature dependence of threshold current for 1.8 to 2.3 µm (AlGaIn)(AsSb)-based QW diode lasers
Alternative
Temperaturabhängigkeit des Schwellenstromes von (AlGaIn)(AsSb) basierenden Quantentopf Diodenlasern im Wellenbereich von 1.8 bis 2.3µm
Abstract
We report on the temperature dependence of threshold current for ridge waveguide. Ga(1-x)In(x)As(y)Sb(l-y)/Al(0.29)Ga(0.71)As(0.02)Sb(0.98) triple-QW diode lasers grown by MBE on GaSb. In and As contents in the QW were in the 0.16<=x<=0.30 and 0<=y<=0.15 range, respectively, resulting in different strain states, band gap energies and band offsets. Devices with lasing wavelengths extending from 1.8 to 2.3 µm at room-temperature were tested in cw mode. Characteristic temperatures for the threshold current ranged from T(0)=172 K at 1.94 µm to T(0)=93 K at 2.23 µm and T(0)=52 K at 2.34 µm for the 200 to 280 K temperature interval. The pronounced drop in T(0) is associated with a significant decrease in the valence band offset from 0.27 eV to 0.22 eV and 0.14 eV.
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