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Plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors

Plasmaunterstützte Molekularstrahlepitaxie von AlGaN/GaN Hochbeweglichkeitstransistoren
: Aidam, R.; Kirste, L.; Kunzer, M.; Müller, S.; Waltereit, P.


Physica status solidi. C 5 (2008), No.6, pp.1902-1905
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
Journal Article
Fraunhofer IAF ()
AlGaN/GaN; molecular beam epitaxy; Molekularstrahlepitaxie; HEMT; FET

We report on the plasma-assisted molecular beam epitaxy (PAMBE) of AlGaN/GaN high electron mobility transistors (HEMTS). Growth was performed on MOCVD grown GaN Templates and 4H-SiC(0001) wafers with 3 diameter. In a detailed study of GaN growth conditions the growth rate was varied between 0.28 and 0.5 µm/h. Under optimized conditions, the surface root mean square roughness was less than 0.6 nm. Low temperature PL measurements in the range 1.9 to 3.8 eV showed only the exciton-emission with a FWHM of 12 meV. AlGaN-HEMT structures on GaN-templates exhibited room temperature Hall mobilities of 1600 cm2/Vs and sheet electron concentration of 8 × 1012/cm2. On SiC mobilities of 1220 cm2/Vs were achieved. Current-voltage output characteristics of PAMBE grown AlGaN/GaN HEMTs on SiC showed a drain current density about 0.8 A/mm for a gate bias of +1V and only small dispersion.