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Phosphorus gettering and multi-crystalline silicon solar cells using in-line diffusion and sprayed phosphoric acid as the dopant source

 
: Voyer, C.; Biro, D.; Buettner, T.; Preu, R.

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Fulltext urn:nbn:de:0011-n-735344 (741 KByte PDF)
MD5 Fingerprint: ac6b14444b9d469b8b3e608228259647
Created on: 26.9.2012


European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 22nd European Photovoltaic Solar Energy Conference, EU PVSEC 2007. Proceedings of the international conference. CD-ROM : Held in Milan, Italy, 3 - 7 September 2007
München: WIP-Renewable Energies, 2007
ISBN: 3-936338-22-1
pp.1613-1616
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <22, 2007, Milano>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
Phosphorus gettering resulting from in-line or POCl3 diffusion was characterized by measuring bulk minority carrier lifetime on samples from five regions of a mc-Si column. Four in-line processes were used: a long and a short one, both resulting in a sheet resistance Rsh approximately equal to 45-50 ohm/sq and each with single- or double-sided dopant source deposition. Long and double-sided diffusion gave overall slightly higher lifetimes than short and single-sided diffusion respectively. Standard screen-printed solar cells were fabricated on wafers from the same five regions of the mc-Si column. The cell efficiencies reflect the lifetime progression along the column. A small improvement of short-circuit current density jsc through double-sided diffusion is observed. The doping profile is however the main factor in determining the efficiency ? of the cells of a same column group.

: http://publica.fraunhofer.de/documents/N-73534.html