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Lifetime studies on laser drilled vias for application in emitter-wrap-through-solar cells
urn:nbn:de:0011-n-735086 (487 KByte PDF)
MD5 Fingerprint: 19730e7580b8823003139adc0d2571f3
Created on: 26.9.2012
|European Commission, Joint Research Centre -JRC-:|
The compiled state-of-the-art of PV solar technology and deployment. 22nd European Photovoltaic Solar Energy Conference, EU PVSEC 2007. Proceedings of the international conference. CD-ROM : Held in Milan, Italy, 3 - 7 September 2007
München: WIP-Renewable Energies, 2007
|European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <22, 2007, Milano>|
| Conference Paper, Electronic Publication|
|Fraunhofer ISE ()|
Two laser sources potentially adequate for via drilling for the application in emitter or metallization wrap through cells are investigated. Both sources have the potential of very high throughput required for emitter wrap through cells. Three different drilling processes are analyzed and compared concerning the recombination activity of the resulting vias. Therefore the dependence of minority carrier lifetime on etching time in alkaline solution and via density is investigated. Further a method for determination of the surface recombination velocity originally derived for dislocations is applied to via holes. The calculated curves sufficiently describe the values derived from measurement, and values of S = 106 cm/s for the lowest etching times up to values of 100 cm/s for the highest etching times are deduced.