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Shunt detection capabilities of luminescence imaging on silicon solar cells
urn:nbn:de:0011-n-734872 (227 KByte PDF)
MD5 Fingerprint: d893a51db2f3cadc16e3589a231f818e
Created on: 29.9.2012
|European Commission, Joint Research Centre -JRC-:|
The compiled state-of-the-art of PV solar technology and deployment. 22nd European Photovoltaic Solar Energy Conference, EU PVSEC 2007. Proceedings of the international conference. CD-ROM : Held in Milan, Italy, 3 - 7 September 2007
München: WIP-Renewable Energies, 2007
|European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <22, 2007, Milano>|
| Conference Paper, Electronic Publication|
|Fraunhofer ISE ()|
We present theory, simulations and measurements showing the research status on shunt detection capabilities of luminescence imaging. The relation between local junction voltage and luminescence signal is discussed. Several aspects regarding series resistance losses caused by lateral majority current flows in solar cells, which are the reason why shunts can be detected with luminescence imaging, are investigated with the help of circuit simulations. Finally, we discuss a fundamental restriction of luminescence imaging for shunt detection but we will also show that this disadvantage could turn into a strength for certain applications.