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Detailed analysis of amorphous silicon passivation layers deposited in industrial in-line and laboratory-type PECVD reactors

: Hofmann, M.; Schmidt, C.; Kohn, N.; Grambole, D.; Rentsch, J.; Glunz, S.W.; Preu, R.

Fulltext urn:nbn:de:0011-n-734781 (250 KByte PDF)
MD5 Fingerprint: 6d603de2e7df1ebbff7be1adb0e85026
Created on: 21.9.2012

European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 22nd European Photovoltaic Solar Energy Conference, EU PVSEC 2007. Proceedings of the international conference. CD-ROM : Held in Milan, Italy, 3 - 7 September 2007
München: WIP-Renewable Energies, 2007
ISBN: 3-936338-22-1
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <22, 2007, Milano>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Amorphous silicon (a-Si) layers for the passivation of p-type silicon wafer surfaces are investigated. The first main topic is the thermal stability of a-Si passivation. Here, an improved thermal stability in annealing (400 °C) and firing processes (wafer temp. 550 °C) could be achieved by stacking a-Si layers with PECVD SiOx layers of different thickness. Hydrogen depth profiling using nuclear reaction analysis shows a hydrogen concentration of 11 at% in the bulk of the a-Si. After firing of single layer a-Si samples a hydrogen concentration peak at the a-Si / c-Si interface could be observed. The second major topic of this paper is the deposition of a-Si layers using an industrial-type inline PECVD reactor. Excellent surface passivation (>1 ms on 1 Ohm cm FZ wafers) can be reported. These a-Si layers are further characterised using FTIR and spectroscopic ellipsometry.