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High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 µm

 
: Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.

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Optics Letters 33 (2008), No.2, pp.201-203
ISSN: 0146-9592
English
Journal Article
Fraunhofer IAF ()
semiconductor disc laser; Halbleiterscheibenlaser; infrared laser; Infrarot-Laser; GaSb; tunable laser; durchstimmbarer Laser; vertical-external-cavity surface-emitting laser

Abstract
We report a high-power (AlGaIn)(AsSb) semiconductor disk laser emitting around 2 ?m. With a diamond heat spreader used for thermal management, a maximum output power of just over 5 W and slope efficiencies of over 25% were demonstrated. The output wavelength was tunable over an 80 nm range centered at 1.98 ?m. The beam propagation parameter (M2) was measured to be in the range of 1.1 to 1.4 for output powers up to 3 W.

: http://publica.fraunhofer.de/documents/N-71032.html