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A reduced approach for modeling the influence of nanoclusters and {113}-defects on transient enhanced diffusion

Ein reduzierter Ansatz zur Modellierung des Einflusses von Nanoclustern und {113}-Defekten auf die transiente Diffusion
 
: Stiebel, D.; Pichler, P.; Cowern, N.E.B.

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Fulltext urn:nbn:de:0011-n-70788 (30 KByte PDF)
MD5 Fingerprint: 007f340cc77abd0309a84b0a9a6fb56b
Copyright AIP
Created on: 7.2.2015


Applied Physics Letters 79 (2001), No.16, pp.2654-2656
ISSN: 0003-6951
ISSN: 1077-3118
English
Journal Article, Electronic Publication
Fraunhofer IIS B ( IISB) ()
silicium; Punktdefekt; makroskopischer Defekt; Nanocluster; {113-Defetke}; transiente Diffusion

Abstract
To simulate transient enhanced diffusion (TED) of dopants after ion implantation, a very accurate model for the interaction of self interstitials with extended defects is indispensable. Recently, such a model has been published by Cowern including the formation of {113} defects via small selfü interstitial clusters. Extracted from experimental results, this continuum model consists of a large set of coupled differential equations and, consequently, simulation times are rather high. In this letter, we present a model based on only seven differential equations leading to almost identical results in comparison to those of the original model. The reduction obtained will allow the application of the clustering model for the simulation of TED in commercial software tool.

: http://publica.fraunhofer.de/documents/N-7078.html