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Impact of interface formation on intersubband transitions in MBE GaInAs:Si/AlAsSb multiple coupled DQWs

: Biermann, K.; Künzel, H.; Tribuzy, C.V.-B.; Ohser, S.; Schneider, H.; Helm, M.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 19th International Conference on Indium Phosphide and Related Materials, IPRM 2007 : 14-18 May 2007, Matsue, Japan
Piscataway, NJ: IEEE, 2007
ISBN: 1-4244-0874-1
International Conference on Indium Phosphide and Related Materials (IPRM) <19, 2007, Matsue>
Conference Paper
Fraunhofer HHI ()
Antimon; Galliumverbindung; Drei-Fünf-Verbindung; Molekularstrahlepitaxie; Quantentopf; Diffusion; Absorptionsspektrum; Grenzschicht

The impact of indium segregation and diffusion of antimony on intersubband transition (IST) wavelengths in AlAsSb/GalnAs multiple quantum well (MQW) and double quantum well (DQW) structures has been evaluated. By means of 8-band k-p calculations the effect of non-abrupt interfaces on IST wavelengths in such structures is elucidated. Comparison of measured and calculated absorption spectra reveals the sacrificial character of AlAs interfacial layers for diffused or segregated atoms and allows for estimating the limits of the intersubband approach as regards short wavelength relaxation transitions.
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