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Degradation of the minority carrier lifetime caused by Mn-correlated defects in Ga-implanted Si:P

 
: Beljakowa, S.; Pensl, G.; Rommel, M.

17th International Photovoltaic Science and Engineering Conference, PVSEC 2007. Technical Digest : December 3-7, 2007, Fukuoka International Congress Center
Fukuoka, 2008
pp.577
International Photovoltaic Science and Engineering Conference (PVSEC) <17, 2007, Fukuoka>
English
Conference Paper
Fraunhofer IISB ()

Abstract
P-doped FZ-silicon is intentionally contaminated with gallium (Ga) and manganese (Mn) by ion implantation. The implanted samples are annealed at elevated temperature and the electrical parameters of the formed defects are extracted by deep level transient spectroscopy (DLTS). In addition, the effect of the generated defects on the minority carrier lifetime is determined by the photo-conductance-decay (PCD) technique. Lifetime measurements indicate that Mn-related defects are strong recombination centers.

: http://publica.fraunhofer.de/documents/N-68348.html