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2007
Conference Paper
Titel
Localized high-resolution stress measurement for microsystems
Abstract
Residual stresses im MEMS devices are one of the crucial reliability issues, because they are inherent to many of the micromachining processes. They superpose with functional or environmental loading during exploitation and can lead to early failure of the whole system. Consequently, their knowledge and control is a strong need designing new microsystems and their packaging. Most available today measurement methods for residual stresses suffer from the fact that they average over larger object areas and cannot be applied very locally, i.e. within areas of a micron or of even substantially smaller size. Only a couple of known tools really allow very local measurements, for instance CBED and microRaman stress techniques. Currently effort is made to extend their scope of measurement towards nanoscopically sized object. Nevertheless these methods also possess specific restrictions for application, in the case of microRaman, e.g., only a particular group of materials can be accessed, which provide suitable Raman lines for Raman shift measurements. The developed by the authors method intends to meet this goal, at the same time considering the method suitable for a larger variety of materials.