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Hier finden Sie wissenschaftliche Publikationen aus den FraunhoferInstituten. Electronic properties and dopant pairing behavior of manganese in borondoped silicon
 Journal of applied physics 102 (2007), No.10 ISSN: 00218979 ISSN: 10897550 

 English 
 Journal Article 
 Fraunhofer ISE () 
Abstract
Borondoped silicon wafers implanted with low doses of manganese have been analyzed by means of deeplevel transient spectroscopy (DLTS), injectiondependent lifetime spectroscopy, and temperaturedependent lifetime spectroscopy. While DLTS measurements allow the defect levels and majority carrier capture cross sections to be determined, the lifetime spectroscopy techniques allow analysis of the dominant recombination levels and the corresponding ratios of the capture cross sections. Interstitial manganese and manganeseboron pairs were found to coexist, and their defect parameters have been investigated. In good agreement with the literature, this study identifies the defect level of manganeseboron pairs to be located in the lower half of the band gap at an energy level of Ev+0.55 eV with a majority carrier capture cross section of sigma(p)=3.5x10(13) cm(2). The capture crosssection ratio was found to be k=sigma(n)/sigma(p)=6.0. This implies that the previously unknown minority carrier capture cross section is sigma(n)=2.1x10(12) cm(2). Concerning the defect related to interstitial manganese, this study identifies the most recombinationactive level to be located in the upper half of the band gap at EC0.45 eV with a corresponding ratio of the capture cross sections of k=9.4. In addition, the temperaturedependent association time constant of manganeseboron pairs is determined to be tau(assoc,Mn)=8.3x10(5) K1 cm(3) (T/Ndop)exp(0.67 eV/k(B)T) and found to differ from that for iron by a factor of 3 at room temperature, allowing this association time constant to be used as a fingerprint for a possible contamination with manganese. Also, the diffusion coefficient of interstitial manganese in silicon is determined from these experiments in a temperature range from 70 to 120 degrees C. It can be represented by the expression DMn=6.9x10(4) cm(2) s(1) exp(0.67 eV/k(B)T).