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Distributed amplifier MMIC with 21 dB gain and 90 GHz bandwidth using InP-based DHBTs

Verteilter Verstärker MMIC mit 21 dB Verstärkung und 90 Ghz Bandbreite basierend auf InP-DHBTs
 
: Schneider, K.; Driad, R.; Makon, R.E.; Weimann, G.

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Institute of Electrical and Electronics Engineers -IEEE-; European Desalination Society -EDS-:
29th IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC 2007 : 14th-17th Oct 2007, Hilton Portland & Executive Tower Portland , Oregon, USA
Piscataway, NJ: IEEE, 2007
ISBN: 1-4244-1022-3
ISBN: 978-1-4244-1023-1
pp.67-70
Compound Semiconductor Integrated Circuit Symposium (CSIC) <29, 2007, Portland/Or.>
English
Conference Paper
Fraunhofer IAF ()
bipolar integrated circuit; distributed amplifier; driver circuits; heterojunction bipolar transistor; indium compounds; MMIC

Abstract
This paper reports a state-of-the-art distributed amplifier intended for use in 100 Gbit/s optical communication systems (Ethernet). Using an InP DHBT technology, exhibiting cut-off frequency values of more than 275 GHz for both fT and fmax, the amplifier achieved a gain of 21 dB and a 90 GHz 3-dB bandwidth, resulting in a gain-bandwidth product (GBW) of 1 THz. To our best knowledge, this represents the highest gain bandwidth product achieved for single-stage amplifiers in any technology reported to date.

: http://publica.fraunhofer.de/documents/N-67092.html