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2007
Conference Paper
Titel
Predictive simulation of AlGaN/GaN HEMTs
Alternative
Aussagkräftige Simulationen von AlGaN/GaN HEMTS
Abstract
For the development of next-generation AlgaN/GaN based high electron mobility transistors (HEMTs) in industry, reliable software tools for DC and AC simulation are required. Our device simulator Minimos-NT was calibrated against experimental data for this purpose. Subsequently, AC and DC simulations for both scaled devices from the same generation and new generation HEMTs were performed. A good accuracy for all relevant characteristics in comparison to measurement results is achieved.
Author(s)