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Predictive simulation of AlGaN/GaN HEMTs

Aussagkräftige Simulationen von AlGaN/GaN HEMTS
: Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S.


Institute of Electrical and Electronics Engineers -IEEE-; European Desalination Society -EDS-:
29th IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC 2007 : 14th-17th Oct 2007, Hilton Portland & Executive Tower Portland , Oregon, USA
Piscataway, NJ: IEEE, 2007
ISBN: 1-4244-1022-3
ISBN: 978-1-4244-1023-1
Compound Semiconductor Integrated Circuit Symposium (CSIC) <29, 2007, Portland/Or.>
Conference Paper
Fraunhofer IAF ()
electronic; Elektronik; device simulation; Bauelement Simulation; HEMT; GaN; Monte Carlo

For the development of next-generation AlgaN/GaN based high electron mobility transistors (HEMTs) in industry, reliable software tools for DC and AC simulation are required. Our device simulator Minimos-NT was calibrated against experimental data for this purpose. Subsequently, AC and DC simulations for both scaled devices from the same generation and new generation HEMTs were performed. A good accuracy for all relevant characteristics in comparison to measurement results is achieved.