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Successful market entry of applied materials' ATON™ system for sputtered SiN:H

: Trassl, R.; Ratschat, H.; Daube, C.; Wieder, S.; Wolke, W.; Preu, R.

Fulltext urn:nbn:de:0011-n-666469 (224 KByte PDF)
MD5 Fingerprint: f78220be0c3abf3138c9c97fc9db5cf4
Created on: 11.10.2012

Poortmans, J. ; European Commission, Joint Research Centre -JRC-:
21st European Photovoltaic Solar Energy Conference 2006. Proceedings. CD-ROM : Proceedings of the international conference held in Dresden, Germany, 4 - 8 September 2006
München: WIP-Renewable Energies, 2006
ISBN: 3-936338-20-5
European Photovoltaic Solar Energy Conference <21, 2006, Dresden>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

In order to increase the efficiency primarily for multi-crystalline wafer-based solar cells, a SiN:H anti-reflective and passivation layer is commonly used as the front surface coating. Conventionally, PECVD processes are utilized in this application. However, sputtering technology possesses several inherent process advantages: it is silane-free, derived from well-proven applications in the architectural glass coating industry, and delivers excellent uniformity at high throughput rates. In close cooperation with the FhG ISE in Freiburg, Applied Materials has developed a sputtering process for SiN:H resulting in cell efficiencies and yield distribution comparable to slower PECVD [1,2] techniques. The first production system has been in routine operation since 2005. Initial results of comparative material performance properties based upon high volume production data are presented in this paper for sputtered SiN:H.