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Spatially resolved trapping detection and correlation with material quality in multicrystalline silicon

 
: Schubert, M.C.; Riepe, S.; Warta, W.

:
Fulltext urn:nbn:de:0011-n-666415 (585 KByte PDF)
MD5 Fingerprint: 2685a77261bb07680534cdfb935c0c0c
Created on: 11.10.2012


Poortmans, J. ; European Commission, Joint Research Centre -JRC-:
21st European Photovoltaic Solar Energy Conference 2006. Proceedings. CD-ROM : Proceedings of the international conference held in Dresden, Germany, 4 - 8 September 2006
München: WIP-Renewable Energies, 2006
ISBN: 3-936338-20-5
pp.629-633
European Photovoltaic Solar Energy Conference <21, 2006, Dresden>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
We present images of the total trap density in standard industrial material which are extracted from Carrier Density Imaging (CDI/ILM) measurements. We demonstrate the influence of high temperature on the trap distribution as well as the spatial correlation of traps and crystal defect density. From these observations we deduce that the trapping effect may originate from impurities located at crystal defects. Fast trapping measurements on ascut wafers are presented that may be used to predict the diffusion length distribution of the processed solar cell for a given cell process. This prediction may be very useful for inline characterisation of starting material.

: http://publica.fraunhofer.de/documents/N-66641.html