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Simulation of the tunnelling current in heavily doped pn-junctions

 
: Mack, B.; Hermle, M.; Philipps, S.; Bett, A.W.

:
Fulltext urn:nbn:de:0011-n-666123 (141 KByte PDF)
MD5 Fingerprint: 85d6cf7baaf2b5e83d271f7d272e5e1e
Created on: 3.10.2012


Poortmans, J. ; European Commission, Joint Research Centre -JRC-:
21st European Photovoltaic Solar Energy Conference 2006. Proceedings. CD-ROM : Proceedings of the international conference held in Dresden, Germany, 4 - 8 September 2006
München: WIP-Renewable Energies, 2006
ISBN: 3-936338-20-5
pp.493-496
European Photovoltaic Solar Energy Conference <21, 2006, Dresden>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
III-V-Simulation

Abstract
In a monolithic MJ solar cell the subcells are interconnected by tunnel diodes. Simulations using the program DESSIS might help to understand and to improve the performance of tunnel diodes. In this work we have investigated the capability of the Hurkx model for the numerical modelling of a tunnel diode. Parameters of the Hurkx model were carefully varied. However, so far experimentally obtained IV curves of a tunnel diode could not be verified by the simulations.

: http://publica.fraunhofer.de/documents/N-66612.html