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2006
Conference Paper
Titel
Amorphous SiC: Applications for silicon solar cells
Abstract
This publication we give an overview of the activities at Fraunhofer ISE investigating SiC as an alternative to SiNx and SiOx. Our first aim was to create a conductive diffusion barrier for our Recrystallized Wafer Equivalent (RexWE). Parameters and characteristics as etch resistance, annealing behaviour (stress development, effusion of hydrogen and dopants), bandgap tuning, p- and n-doping (influence on resistivity) and diffusion behaviour were investigated. Especially the good thermal stability of our layers let us start to optimize SixC1-x as a rear-side surface passivation on p-type silicon. On a PERC structure an open-circuit voltage of 682 mV after firing at 800°C could be achieved. Further photovoltaic applications of this variable layer (single layer or stack) will be discussed.