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21%-efficient silicon solar cells using amorphous silicon rear side passivation

: Hofmann, M.; Glunz, S.; Preu, R.; Willeke, G.

Fulltext urn:nbn:de:0011-n-665938 (342 KByte PDF)
MD5 Fingerprint: e7daf1615c315b37a737c1ce7f8aeef9
Created on: 29.9.2012

Poortmans, J. ; European Commission, Joint Research Centre -JRC-:
21st European Photovoltaic Solar Energy Conference 2006. Proceedings. CD-ROM : Proceedings of the international conference held in Dresden, Germany, 4 - 8 September 2006
München: WIP-Renewable Energies, 2006
ISBN: 3-936338-20-5
European Photovoltaic Solar Energy Conference <21, 2006, Dresden>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Stacks of amorphous silicon and silicon oxide â all deposited by PECVD - are used to passivate the rear surfaces of high-efficiency solar cell structures on p-type float zone substrates. Energy conversion efficiencies of up to 21.7 % can be reported. An investigation of the effect of a post-process annealing at different temperatures is presented with I-V and IQE measurements leading to the conclusion that the rear surface passivation is stable until a temperature of 400 °C. Additionally, investigations on the passivation quality of single layer amorphous silicon and stacks of amorphous silicon and silicon oxide were performed. Surface recombination velocities below 6 cm/s could be measured leading to an excellent surface passivation of p-type float zone wafers (1 ohm cm).