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PECVD PSG as a dopant source for industrial solar cells

: Benick, J.; Rentsch, J.; Schetter, C.; Voyer, C.; Biro, D.; Preu, R.

Preprint urn:nbn:de:0011-n-665536 (580 KByte PDF)
MD5 Fingerprint: 68de53667cc27d15607d4f5f6b0d7393
Created on: 24.1.2009

Poortmans, J. ; European Commission, Joint Research Centre -JRC-:
21st European Photovoltaic Solar Energy Conference 2006. Proceedings. CD-ROM : Proceedings of the international conference held in Dresden, Germany, 4 - 8 September 2006
München: WIP-Renewable Energies, 2006
ISBN: 3-936338-20-5
European Photovoltaic Solar Energy Conference <21, 2006, Dresden>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Emitter formation by in-line deposition of a PECVD PSG and subsequent diffusion in an in-line belt furnace is suggested as an alternative to quartz tube diffusion. The PSG deposition process reached excellent layer homogeneities, both across a single wafer and across the whole carrier, resulting in very uniform sheet resistance distributions. Relative standard deviations of 2,5 % have been achieved. Solar cells with the developed emitter reached efficiencies of up to 17,5 % and 16,8 % on textured and untextured Cz-Si respectively.