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Detailed photocurrent analysis of iron contaminated boron doped silicon by comparison of simulation and measurement

: Rommel, M.; Bauer, A.J.; Ryssel, H.


Kolbesen, B.O. ; Electrochemical Society -ECS-, Electronics and Photonics Division:
Analytical Techniques for Semiconductor Materials and Process Characterization 5, ALTECH 2007 : September 13 - September 14, 2007, Munich, Germany
Red Hook, NY: Curran, 2007 (ECS transactions 10.2007, Nr.1)
ISBN: 978-1-604-23825-9
Symposium "Analytical Techniques for Semiconductor Materials and Process Characterization" (ALTECH) <5, 2007, München>
Conference Paper
Fraunhofer IISB ()
carrier lifetime spectroscopy; iron contamination; injection level dependence; Elymat technique; Elymos technique; electrostatic passivation; carrier lifetime modeling

In this work, an extensive injection level dependent carrier lifetime study on intentionally iron contaminated boron-doped silicon has been performed by using the Elymat carrier lifetime method. The influence of both, iron and boron concent rations is investigated. Results from both Elymat measurement modes are considered and critically compared with simulations. The results clearly indicate that for low injection conditions, surface passivation with diluted HF is not sufficient whereas so-called electrostatic passivation allows for correct lifetime measurements. For the first time, results from both Elymat measurement modes are modeled consistently. The results prove that using optimized measurement and evaluation procedures the Elymat method is an appropriate technique for the quantitative determination of iron in case of iron being the relevant contaminant in boron doped silicon.