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Identification of point defects in Ga(Al)NAs alloys

Identifikation von Punktdefekten in Ga(Al)NAs
 
: Vorona, I.P.; Mchedlidze, T.; Dagnelund, D.; Buyanova, I.A.; Chen, W.M.; Köhler, K.

Jantsch, W.:
Physics of semiconductors. 28th International Conference on the Physics of Semiconductors, ICPS 2006. Vol.A : Vienna, Austria, 24 - 28 July 2006
New York, N.Y.: AIP Press, 2007 (AIP conference proceedings 893)
ISBN: 978-0-7354-0397-0
ISBN: 0-7354-0397-X
pp.227-228
International Conference on the Physics of Semiconductors (ICPS) <28, 2006, Wien>
English
Conference Paper
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; optical spectroscopy; optische Spektroskopie; point defects; Punktdeffekt

Abstract
By employing the optically detected magnetic resonance (ODMR) technique, two different Ga(ind i) defects, namely Ga(ind i)-A and Ga(ind i)-B, are found and identified in the investigated Ga(Al)NAs epilayers grown on GaAs substrates by molecular-beam epitaxy (MBE). This finding shows that Ga interstitials are common intrinsic defects in various dilute nitrides. In addition to the Ga(ind i)-related defects, "middle line" ODMR signals were observed at around g=2 and are suggested to arise from superposition of a defect with a single ODMR line and a defect with an unresolved HF structure. All defects studied are shown to act as non-radiative recombination centers, and are therefore harmful to performance of potential light-emitting devices based on the alloys.

: http://publica.fraunhofer.de/documents/N-65018.html