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2007
Conference Paper
Titel
Identification of point defects in Ga(Al)NAs alloys
Alternative
Identifikation von Punktdefekten in Ga(Al)NAs
Abstract
By employing the optically detected magnetic resonance (ODMR) technique, two different Ga(ind i) defects, namely Ga(ind i)-A and Ga(ind i)-B, are found and identified in the investigated Ga(Al)NAs epilayers grown on GaAs substrates by molecular-beam epitaxy (MBE). This finding shows that Ga interstitials are common intrinsic defects in various dilute nitrides. In addition to the Ga(ind i)-related defects, "middle line" ODMR signals were observed at around g=2 and are suggested to arise from superposition of a defect with a single ODMR line and a defect with an unresolved HF structure. All defects studied are shown to act as non-radiative recombination centers, and are therefore harmful to performance of potential light-emitting devices based on the alloys.
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