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The two-dimensional bigradient effect and its application for GHz-THz sensing

Zweidimensionaler Doppelgradienteneffekt und seine Anwendung als GHz-THz Sensor
: Seliuta, D.; Gruzinskis, V.; Tamosiunas, V.; Juozapavicius, A.; Kasalynas, I.; Asmontas, S.; Valusis, G.; Steenson, P.; Chow, W.-H.; Harrison, P.; Lisauskas, A.; Roskos, H.G.; Köhler, K.

Jantsch, W.:
Physics of semiconductors. 28th International Conference on the Physics of Semiconductors, ICPS 2006. Vol.A : Vienna, Austria, 24 - 28 July 2006
New York, N.Y.: AIP Press, 2007 (AIP conference proceedings 893)
ISBN: 978-0-7354-0397-0
ISBN: 0-7354-0397-X
International Conference on the Physics of Semiconductors (ICPS) <28, 2006, Wien>
Conference Paper
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; heterostructure; Heterostruktur; electrical property; elektrische Eigenschaft

A well-pronounced asymmetry in I-V-characteristics within low, 4.2-80 K, temperatures is demonstrated in asymmetrically in-plane shaped modulation-doped GaAs/AlGaAs structures. The results are explained by the presence of two different electric field gradients - the bigradient effect - induced by the geometrical shape. The features of the effect are revealed; the possibility to use it for GHz-THz sensing is explored via development of asymmetrically-shaped GaAs/Al0.3Ga0.7As-based and In0.54Ga0.46As-based bow-tie diodes. An effective bandwidth of 10 GHz - 1 THz and a sensitivity of about 5-6 V/W is achieved at room temperature.