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Integration of In2O3 nanoparticle based ozone sensors with GaInN/GaN light emitting diodes

: Wang, C.-Y.; Cimalla, V.; Kups, T.; Röhlig, C.-C.; Stauden, T.; Ambacher, O.; Kunzer, M.; Passow, T.; Schirmacher, W.; Pletschen, W.; Köhler, K.; Wagner, J.


Applied Physics Letters 91 (2007), No.10, Art. 103509, 3 pp.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()

There is a high demand for compact low-cost ozone sensors. It has been shown recently that In2O3 nanolayers can act as ozone sensitive films activated at room temperature by ultraviolet light. In the present work, the authors integrate ultrathin layers of In2O3 nanoparticles and a GaInN/GaN based blue light emitting diode (LED) on a single sensor chip. The integrated sensor was found to be sensitive to O-3 concentrations as low as similar to 40 ppb. These results demonstrate that by integrating GaInN/GaN based blue LEDs and metal oxide sensing layers back to back on a single chip, compact and robust gas sensors can be realized.