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Middle Cell Development for Wafer-Bonded III-V//Si Tandem Solar Cells

: Schygulla, P.; Heinz, F.D.; Dimroth, F.; Lackner, D.

Postprint urn:nbn:de:0011-n-6407604 (656 KByte PDF)
MD5 Fingerprint: 05acd581a24c36df50a25c55255fce74
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Created on: 6.10.2021

IEEE Journal of Photovoltaics 11 (2021), No.5, pp.1264-1270
ISSN: 2156-3381
ISSN: 2156-3403
Bundesministerium fur Wirtschaft und Energie BMWi (Deutschland)
0324247; PoTaSi
Journal Article, Electronic Publication
Fraunhofer ISE ()
Photovoltaik; AlGaAs; GaInAsP; III-V/Si tandem solar cells; MOVPE; multijunction solar cells; III-V- und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen; III-V-Silicium Tandemphotovoltaik

This article focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, and their usage as middle cell absorber materials in a wafer-bonded III-V//Si triple-junction solar cell. To this end single-junction solar cells were grown epitaxially lattice matched on GaAs wafers using metalorganic vapor phase epitaxy. By optimizing the growth temperature and the V/III ratio we could increase the open-circuit voltage at a target absorber band gap of 1.50 eV by up to 100 mV. In the future these results will be implemented into two-terminal III-V//Si triple-junction solar cells to increase the conversion efficiency beyond 35% under the AM1.5g solar spectrum.