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InGaAsP Radiation Hardness and Post Irradiation Regeneration Behavior

 
: Lang, R.; Schön, J.; Godejohann, B.-J.; Lefevre, J.; Boizot, B.; Dimroth, F.; Lackner, D.

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Institute of Electrical and Electronics Engineers -IEEE-:
47th IEEE Photovoltaic Specialists Conference, PVSC 2020 : 15-21 June 2020, Calgary, Canada, Virtual Meeting
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-6116-7 (Print)
ISBN: 978-1-7281-6115-0
pp.2403-2405
Photovoltaic Specialists Conference (PVSC) <47, 2020, Online>
English
Conference Paper
Fraunhofer ISE ()

Abstract
As an answer to increased demand for more radiation tolerant solar cells for space applications, we investigate the dependence of radiation hardness of III-V compounds on composition of InGaAsP. Four solar cells with different composition were grown on InP and metamorphically on GaAs and irradiated with 1 MeV electrons. A simulation-based analysis was used to determine the material specific irradiation damage. In addition, the regeneration ability is investigated under typical operating conditions (60 °C and AM0 illumination) and under the ECSS standard. While a clear decrease in radiation damage compared to GaAs is observed in all samples, the effect is stronger with increasing InP-fraction. The irradiation induced defect recombination coefficient can be described with a linear function of InP-fraction.

: http://publica.fraunhofer.de/documents/N-639473.html