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Wafer-bonded GaInP/GaAs/GaInAs//GaSb four-junction solar cells with 43.8% efficiency under concentration

: Predan, F.; Franke, A.; Hoehn, O.; Lackner, D.; Helmers, H.; Siefer, G.; Bett, A.W.; Dimroth, F.


Institute of Electrical and Electronics Engineers -IEEE-:
47th IEEE Photovoltaic Specialists Conference, PVSC 2020 : 15-21 June 2020, Calgary, Canada, Virtual Meeting
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-6116-7 (Print)
ISBN: 978-1-7281-6115-0
Photovoltaic Specialists Conference (PVSC) <47, 2020, Online>
Conference Paper
Fraunhofer ISE ()

III-V based multi-junction solar cells with 4 to 6 junctions reach the highest efficiencies for the conversion of solar energy today. We present the latest results on the development of a GaInP/GaAs/GaInAs//GaSb four-junction solar cell. The implemented devices show an efficiency of 43.8 ±2.6 % at a concentration of 796 suns and the efficiency decreases only marginally for higher concentrations up to 1378 suns. The remaining loss mechanisms of the device are analyzed and quantified. The Sb-based four-junction cell has the potential of reaching 50% conversion efficiency in future.