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Low-cost Cu-plated metallization on TCOs for SHJ Solar Cells - Optimization of PVD Contacting-layer

: Hatt, T.; Bartsch, J.; Kluska, S.; Nold, S.; Glunz, S.W.; Glatthaar, M.


Institute of Electrical and Electronics Engineers -IEEE-:
47th IEEE Photovoltaic Specialists Conference, PVSC 2020 : 15-21 June 2020, Calgary, Canada, Virtual Meeting
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-6116-7 (Print)
ISBN: 978-1-7281-6115-0
Photovoltaic Specialists Conference (PVSC) <47, 2020, Online>
Conference Paper
Fraunhofer ISE ()

Our novel metallization approach for silicon heterojunction (SHJ) solar cells takes advantage of a PVD metal-stack covered with a structured self-passivated Al layer as mask for electroplating a Cu grid. This plating metallization route enables a very low cost of ownership (COO) for SHJ solar cell back-end processing for busbars interconnection. Encouraging efficiencies of 22.1% are reached with FF > 81% and R s down to 0.39 Ω·cm 2 on large area. A variation of the contact layer to ITO shows that of the investigated materials, TiW reached a sufficiently low contact resistivity down to 0.7 ± 0.3 mΩ·cm 2 while for pure Ti it was too low to be measured (0.1 ± 0.3 mΩ-cm 2 ). High busbar peel-off forces above 3 N/mm (Ti) are demonstrated.. Furthermore, a carefully adjusted etch-back procedure proves that AZO can be combined with our plated metallization to manufacture Ag- and In-free SHJ solar cells.