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Design of low-resistance and area-efficient GaN-HEMTs for low-voltage power applications

 
: Reiner, Richard; Benkhelifa, Fouad; Mönch, Stefan; Basler, Michael; Waltereit, Patrick; Mikulla, Michael; Quay, Rüdiger; Ambacher, Oliver

MESAGO Messe Frankfurt GmbH, Stuttgart:
PCIM Europe digital days 2021 : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Proceedings, 3 - 7 May 2021, CD-ROM
Berlin: VDE-Verlag, 2021
ISBN: 978-3-8007-5515-8
ISBN: 3-8007-5515-7
pp.401-408
PCIM Europe Digital Days <2021, Online>
International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management <2021, Online>
English
Conference Paper
Fraunhofer IAF ()

Abstract
This work analyzes different layouts for low-resistance and area-efficient GaN-HEMT devices for low voltage power applications. The current distribution in interdigital comb and matrix structures is investigated and geometry parameters are optimized to achieve the lowest possible area-specific on-state resistance for given technology limits. A new model is analytically derived to investigate the static on-state behavior in matrix structures. Fabricated large area power transistors feature low specific on-state resistances RON∙A of 0.61 mΩ∙cm² for the comb structure, a reduced specific on-state resistance of 0.37 mΩ∙cm² for the matrix structure, and a further reduced specific on-state resistance of0.23 mΩ∙cm² for a high-density, fully symmetrical matrix structure.

: http://publica.fraunhofer.de/documents/N-635963.html