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Reliability and failure analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress

: Dammann, Michael; Baeumler, Martina; Kemmer, Tobias; Konstanzer, Helmer; Brueckner, Peter; Krause, Sebastian; Graff, Andreas; Simon-Najasek, Michél


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE International Reliability Physics Symposium, IRPS 2021. Proceedings : Virtual Conference, 21 March - 24 March 2021
Piscataway, NJ: IEEE, 2021
ISBN: 978-1-7281-6893-7
ISBN: 978-1-7281-6894-4
7 pp.
International Reliability Physics Symposium (IRPS) <2021, Online>
Conference Paper
Fraunhofer IAF ()
Fraunhofer IMWS ()
accelerated aging; HEMTs; failure analysis; life testing; microwave circuits

Degradation of 100 nm AlGaN/GaN HEMTs under DC and 10 GHz stress conditions has been compared and a promising median lifetime of more than 2000 h under RF stress in air at a drain voltage of 15 V and an average channel temperature of 230°C has been achieved. It has been found that the devices degrade faster under RF stress compared to DC stress. Physical failure analysis using electroluminescence imaging, TEM and EDX cross-sections parallel and perpendicular to the gate finger shows that the local oxidation induced pit formation beside the gate foot and the interdiffusion of Pt with Al, Ga and N are the main failure mechanisms causing the degradation in saturation current and increase of leakage current of DC stressed devices.