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Electric characteristics of planar interconnect technologies for power MOSFETs

: Dieckerhoff, S.; Kirfo, T.; Wernicke, T.; Kallmayer, C.; Ostmann, A.; Jung, E.; Wunderle, B.; Reichl, H.


Institute of Electrical and Electronics Engineers -IEEE-:
38th IEEE Power Electronics Specialists Conference, PESC 2007. Conference Proceedings : Orlando, Florida, 17.-21.06.2007
New York, NY: IEEE, 2007
ISBN: 1-4244-0655-2
ISBN: 978-1-4244-0655-5
Power Electronics Specialists Conference (PESC) <38, 2007, Orlando/Fla.>
Conference Paper
Fraunhofer IZM ()

In this paper, two planar interconnection technologies for power semiconductors - a Flip Chip solution with a flexible substrate and a Chip-in-Polymer approach - are presented. These technologies substitute the wire bonds which are usually applied to contact the top side pads of power semiconductors. The process flow of the technology developments is explained. Exemplarily, prototypes are built applying fast switching MOSFETs in the voltage class up to 100V. Based on these prototypes, experimental and simulation results with regard to the thermo-electric characteristics of the prototypes are discussed.